Goldman Sachs Group Inc. Grows Stock Position in Wolfspeed $WOLF

Goldman Sachs Group Inc. lifted its stake in shares of Wolfspeed (NYSE:WOLF) by 176.7% in the 1st quarter, according to its most recent Form 13F filing with the Securities and Exchange Commission (SEC). The fund owned 1,380,499 shares of the company’s stock after purchasing an additional 881,603 shares during the quarter. Goldman Sachs Group Inc. owned about 0.89% of Wolfspeed worth $4,224,000 at the end of the most recent quarter.

Other large investors have also recently bought and sold shares of the company. N.E.W. Advisory Services LLC purchased a new position in Wolfspeed in the first quarter worth $28,000. Beacon Capital Management LLC purchased a new position in Wolfspeed in the first quarter worth $31,000. Wealthfront Advisers LLC purchased a new position in Wolfspeed in the first quarter worth $32,000. MAI Capital Management raised its position in Wolfspeed by 894.9% in the first quarter. MAI Capital Management now owns 10,815 shares of the company’s stock worth $33,000 after acquiring an additional 9,728 shares in the last quarter. Finally, Twin Tree Management LP purchased a new position in Wolfspeed in the first quarter worth $42,000.

Wolfspeed Trading Up 10.9%

NYSE:WOLF opened at $2.74 on Thursday. The stock has a fifty day moving average price of $1.54 and a two-hundred day moving average price of $2.42. The stock has a market capitalization of $428.73 million, a price-to-earnings ratio of -0.24 and a beta of 1.29. The company has a debt-to-equity ratio of 30.65, a quick ratio of 0.30 and a current ratio of 0.36. Wolfspeed has a 1 year low of $0.39 and a 1 year high of $17.45.

Wolfspeed Company Profile

Wolfspeed, Inc operates as a powerhouse semiconductor company focuses on silicon carbide and gallium nitride (GaN) technologies in Europe, Hong Kong, China, rest of Asia-Pacific, the United States, and internationally. It offers silicon carbide and GaN materials, including silicon carbide bare wafers, epitaxial wafers, and GaN epitaxial layers on silicon carbide wafers to manufacture products for RF, power, and other applications.