Rhumbline Advisers Has $1.05 Million Holdings in Wolfspeed $WOLF

Rhumbline Advisers increased its holdings in Wolfspeed (NYSE:WOLF) by 10.8% during the first quarter, according to its most recent 13F filing with the Securities and Exchange Commission (SEC). The fund owned 342,505 shares of the company’s stock after acquiring an additional 33,361 shares during the period. Rhumbline Advisers owned about 0.22% of Wolfspeed worth $1,048,000 at the end of the most recent quarter.

Other institutional investors and hedge funds also recently made changes to their positions in the company. N.E.W. Advisory Services LLC acquired a new stake in shares of Wolfspeed in the 1st quarter worth about $28,000. Beacon Capital Management LLC acquired a new stake in shares of Wolfspeed in the 1st quarter worth about $31,000. Wealthfront Advisers LLC purchased a new stake in Wolfspeed in the 1st quarter valued at about $32,000. MAI Capital Management increased its stake in Wolfspeed by 894.9% in the 1st quarter. MAI Capital Management now owns 10,815 shares of the company’s stock valued at $33,000 after buying an additional 9,728 shares during the last quarter. Finally, Twin Tree Management LP purchased a new stake in Wolfspeed in the 1st quarter valued at about $42,000.

Wolfspeed Trading Down 10.2%

NYSE:WOLF opened at $2.21 on Friday. The company has a debt-to-equity ratio of 30.65, a quick ratio of 0.30 and a current ratio of 0.36. The firm has a market cap of $345.80 million, a price-to-earnings ratio of -0.20 and a beta of 1.29. Wolfspeed has a 52 week low of $0.39 and a 52 week high of $17.45. The firm has a 50-day moving average price of $1.57 and a two-hundred day moving average price of $2.36.

About Wolfspeed

Wolfspeed, Inc operates as a powerhouse semiconductor company focuses on silicon carbide and gallium nitride (GaN) technologies in Europe, Hong Kong, China, rest of Asia-Pacific, the United States, and internationally. It offers silicon carbide and GaN materials, including silicon carbide bare wafers, epitaxial wafers, and GaN epitaxial layers on silicon carbide wafers to manufacture products for RF, power, and other applications.